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SiC632 SiC632A testing pin configuration

The SiC632 and SiC632A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 5 mm x 5 mm MLP package, SiC632 and SiC632A enables voltage regulator designs to deliver up to 50 A continuous current per phase. The internal power MOSFETs utilizes Vishay’s state-of-the-art Gen IV TrenchFET® technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. The SiC632 and SiC632A incorporate an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and zero current detection to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3 V (SiC632A), 5 V (SiC632) PWM logic.

FEATURES • Thermally enhanced PowerPAK® MLP55-31L package • Vishay’s Gen IV MOSFET technology and a low side MOSFET with integrated Schottky diode • Delivers up to 50 A continuous current • High efficiency performance • High frequency operation up to 1.5 MHz • Power MOSFETs optimized for 19 V input stage • 3.3 V (SiC632A), 5 V (SiC632) PWM logic with tri-state and hold-off • Zero current detect control for light load efficiency improvement • Low PWM propagation delay (< 20 ns) • Faster disable • Thermal monitor flag • Under voltage lockout for VCIN • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

PIN CONFIGURATION • Check all the Ground pin that beeps to ground, all other pins should not beep to ground.


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